Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays.
نویسندگان
چکیده
A multiferroic BiMnO3 nanowire array was prepared using a hydrothermal process and its resistive switching memory behaviors were further investigated. The prominent ferroelectricity can be well controlled by white-light illumination, thus offering an excellent light-controlled resistive switching memory device using a Ag/BiMnO3/Ti structure at room temperature.
منابع مشابه
Retraction: Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays.
Retraction of 'Light-controlled resistive switching memory of multiferroic BiMnO3 nanowire arrays' by Bai Sun and Chang Ming Li, Phys. Chem. Chem. Phys., 2015, 17, 6718-6721.
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ورودعنوان ژورنال:
- Physical chemistry chemical physics : PCCP
دوره 17 10 شماره
صفحات -
تاریخ انتشار 2015